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Epitaxial Felt

● Designed specifically for SiC epitaxial process, unique assembly structure, high resistivity, avoids sparking
● Has good thermal insulation performance
优点
Specially designed for SiC epitaxial process, unique assembly structure, high resistivity, avoid sparking
Has good thermal insulation performance

Performance Indicators

Performance Indicators Units VU-LHF-HV02
Density g/cm³ 0.15-0.17
Carbon Content wt >99.9
Heat-Treatment Temperature 2400
Average Thermal Conductivity 1000℃ W/(m·K) 0.2
Ash Content ppm <20
Compressive Strength Face Direction(5%) Mpa 0.25
Two-sided Direction 1.56
Bending Strength Face Direction Mpa 0.35
Two-sided Direction 1.2
Electrical Resistivity Face Direction Ω.m 6.9*10-3
Two-sided Direction 7.6*10-4
Usage Environment Air 400
Vacuum 2400
Inert Gas 3200
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